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1.2V Drive Pch MOSFET
EM6J1
Structure Silicon P-channel MOSFET Dimensions (Unit : mm)
EMT6
Features 1) Two Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Ultra low voltage drive (1.2V drive). 4) Built-in G-S Protection Diode.
Abbreviated symbol : J01
Each lead has same dimensions
Applications Switching Packaging specifications
Package Type EM6J1
2
Inner circuit
Taping T2R 8000
2 (6) (5) 1 (4)
Code Basic ordering unit (pieces)
1 (1) (2) (3)
1 ESD PROTECTION DIODE 2 BODY DIODE
(1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (4) Tr2 Source (5) Tr2 Gate (6) Tr1 Drain
Absolute maximum ratings (Ta=25C)
Parameter Symbol VDSS VGSS ID IDP1 IS ISP 1 PD 2 Tch Tstg Limits -20 10 200 800 -100 -800 150 120 150 -55 to +150 Unit V V mA mA mA mA mW / TOTAL mW / ELEMENT C C
Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Continuous Pulsed Continuous Pulsed
Total power dissipation Channel temperature Range of storage temperature
1 Pw 10s, Duty cycle 1% 2 Each terminal mounted on a recommended land
Thermal resistance
Parameter Channel to ambient
Each therminal mounted on a recommended land
Symbol Rth (ch-a)
Limits 833 1042
Unit C / W / TOTAL C / W / ELEMENT
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1/4
2009.05 - Rev.A
EM6J1
Electrical characteristics (Ta=25C)
Parameter Symbol Min. IGSS Gate-source leakage - Drain-source breakdown voltage V(BR) DSS -20 Zero gate voltage drain current IDSS - Gate threshold voltage VGS (th) -0.3 - - Static drain-source on-state - RDS (on) resistance - - Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed
Data Sheet
Typ. - - - - 0.8 1.0 1.3 1.6 2.4 - 115 10 6 6 4 17 17 1.4 0.3 0.3
Max. 10 - -1 -1.0 1.2 1.5 2.2 3.5 9.6 - - - - - - - - - - -
Unit A V A V S pF pF pF ns ns ns ns nC nC nC
Conditions VGS= 10V, VDS=0V ID=-1mA, VGS=0V VDS=-20V, VGS=0V VDS=-10V, ID=-100A ID=-200mA, VGS=-4.5V ID=-100mA, VGS=-2.5V ID=-100mA, VGS=-1.8V ID=-40mA, VGS=-1.5V ID=-10mA, VGS=-1.2V VDS=-10V, ID=-200mA VDS=-10V VGS=0V f=1MHz VDD -10V ID=-100mA VGS=-4.5V RL 100 RG=10 VDD -10V, ID=-200mA VGS=-4.5V RL 50, RG=10
Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd
0.2 - - - - - - - - - -
Body diode characteristics (Source-drain)
Parameter Forward voltage Pulsed Symbol VSD Min. - Typ. - Max. -1.2 Unit V Conditions IS= -200mA, VGS=0V
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2/4
2009.05 - Rev.A
EM6J1
Electrical characteristics curves
Data Sheet
0.2 VGS= -10.0V VGS= -4.5V VGS= -3.2V
Ta=25C Pulsed DRAIN CURRENT : -ID [A]
0.2 VGS= -4.5V 0.15 VGS= -2.5V VGS= -1.8V VGS= -1.5V
Ta=25C Pulsed DRAIN CURRENT : -ID [A]
1 V = -10V DS Pulsed 0.1 Ta= 125C Ta= 75C Ta= 25C Ta= - 25C
DRAIN CURRENT : -ID [A]
0.15
0.1 VGS= -1.5V 0.05 VGS= -1.2V 0 0 0.2 0.4 0.6
VGS= -2.5V VGS= -2.0V VGS= -1.8V
0.1
VGS= -1.2V
0.01
0.05 VGS= -1.0V 0
0.001
VGS= -1.0V
0.0001 0 2 4 6 8 10 0 0.5 1 1.5
0.8
1
DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical output characteristics()
DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.2 Typical output characteristics()
GATE-SOURCE VOLTAGE : -VGS[V] Fig.3 Typical Transfer Characteristics
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m]
10000
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m]
Ta=25C Pulsed
10000
VGS= -4.5V Pulsed
10000 Ta=125C Ta=75C Ta=25C Ta= -25C
VGS= -2.5V Pulsed
Ta=125C Ta=75C Ta=25C Ta= -25C
1000 VGS= -1.2V VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V 100 0.001 0.01 0.1 1
1000
1000
100 0.001
0.01
0.1
1
100 0.001
0.01
0.1
1
DRAIN-CURRENT : -ID [A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current()
DRAIN-CURRENT : -ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current()
DRAIN-CURRENT : -ID [A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current()
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m]
10000
Ta=125C Ta=75C Ta=25C Ta= -25C
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m]
VGS= -1.8V Pulsed
10000
VGS= -1.5V Pulsed
10000
VGS= -1.2V Pulsed
1000
1000 Ta=125C Ta=75C Ta=25C Ta= -25C
1000
Ta=125C Ta=75C Ta=25C Ta= -25C
100 0.001
0.01
0.1
1
100 0.001
0.01 DRAIN-CURRENT : -ID [A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current()
0.1
100 0.001
0.01 DRAIN-CURRENT : -ID [A] Fig.9 Static Drain-Source On-State Resistance vs. Drain Current()
0.1
DRAIN-CURRENT : -ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current()
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2009.05 - Rev.A
EM6J1
FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 1.0 STATIC DRAIN-SOURCE ON-STATE ] RESISTANCE : R DS(ON)[ REVERSE DRAIN CURRENT : -Is [A] VDS= -10V Pulsed 1 VGS=0V Pulsed 5 Ta=25C Pulsed
Data Sheet
4 ID = -0.2A 3 ID = -0.01A 2
Ta=-25C Ta=25C Ta=75C Ta=125C
0.1
Ta=125C Ta=75C Ta=25C Ta=-25C
1
0.1 0.01
0.01 0.1 DRAIN-CURRENT : -ID [A] Fig.10 Forward Transfer Admittance vs. Drain Current 1 0 0.5 1 1.5
0 0 2 4 6 8 10
SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.11 Reverse Drain Current vs. Sourse-Drain Voltage
GATE-SOURCE VOLTAGE : -VGS[V] Fig.12 Static Drain-Source On-State Resistance vs. Gate Source Voltage
1000 td(off) SWITCHING TIME : t [ns] 100 tf
GATE-SOURCE VOLTAGE : -VGS [V]
4
CAPACITANCE : C [pF]
Ta=25C VDD = -10V VGS=-4.5V R G=10 Pulsed
5
1000
Ta=25C f=1MHz VGS=0V
Ciss
100
3
2 Ta=25C VDD = -10V ID = -0.2A R G=10 Pulsed 0 0.5 1 1.5
10
10 Coss Crss 1 0.01 0.1 1 10 100
1
tr 1 0.01
td(on) 0.1 DRAIN-CURRENT : -ID [A] 1
0
TOTAL GATE CHARGE : Qg [nC] Fig.14 Dynamic Input Characteristics
Fig.13 Switching Characteristics
DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.15 Typical Capacitance vs. Drain-Source Voltage
Measurement circuit
VGS 10% 50%
VGS ID VDS
Pulse Width 50%
90%
D.U.T. RG
RL
10% VDS 90%
tr ton td(off) toff
10% 90%
tf
VDD
td(on)
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
VG
VGS
ID RL D.U.T.
VDS
Qg VGS
IG(Const.) RG
VDD
Qgs
Qgd
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit.
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2009.05 - Rev.A
Notice
Notes
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